Ancora Semiconductor Inc. Announces NT$456M Investment
from ROHM Co., Ltd., Sino-American Silicon, uPI Semiconductors and Delta Electronics Inc.

TAIPEI, September 14, 2022 — Ancora Semiconductor Inc., (Ancora), 3^rd generation  power semiconductor technology developer and a Delta Electronics affiliate focusing on Gallium Nitride (GaN) technology, today announced the investments of its first capital raising round of NT$ 456M by strategic investors ROHM Co., Ltd. (ROHM), Sino-American Silicon (SAS), uPI Semiconductors (uPI), and Delta Electronics Inc. (Delta). The aforementioned capital raising is expected to accelerate Ancora’s GaN development endeavors.
“GaN is the future of power electronics with benefits of faster switching frenqucies, higher efficiency, and lower energy consumption. The ecosystem of GaN technology is evolving rapidly as applications are continuously emerging. We are thrilled to have ROHM, SAS and uPI as our strategic partners and investors. We are also grateful for thecommitment by our parent company Delta, a leader in power and thermal management technologies and global provider of smart energy-saving solutions.” , said Dr. T.K. Shing, president of Ancora Semiconductors. He added, “This powerful alliance will enable us to establish an ecosystem with strong partners in substrate materials, IC design, applications and system solutions, to expedite the adoption of GaN technology that promises unprecedented performance value”.
The Ancora product line includes the industry’s technology leading GaN discrete components, System in Package (SiP) and System on Chip (SoC) with superior quality, reliability and durability proven under Delta’s stringent qualification system. Delta’s commitment to provide a wide range of smart energy-saving solutions that leverage its core competence in high-efficiency power electronics, will provide additional momentum and fuel Ancora’s long-term growth. This alliance and capital raising is expected to enable Ancora to increase production capability to serve the growing demand for GaN devices in consumer electronics, telecom, and automotive applications. The ultimate goal is to maximize GaN performance to accelerate power technology innovation and contribute to achievesustainable development based on energy efficiency.